Signals generated in memristive circuits

• Autorzy: Artur Sowa
• Języki publikacji: EN

Abstrakty

EN

Signals generated in circuits that include nano-structured elements typically have strongly distinct characteristics, particularly the hysteretic distortion. This is due to memristance, which is one of the key electronic properties of nanostructured materials. In this article, we consider signals generated from a memrsitive circuit model. We demonstrate numerically that such signals can be efficiently represented in certain custom-designed nonorthogonal bases. The proposed method ensures that the actual numerical representation can be implemented as a fast, O(N logN), algorithm. In addition, we discuss the possibility of modelling the hysteretic distortion via fast numerical transforms.

Słowa kluczowe

EN

Memristance; nanoelectronics; fast algorithms; nonlinear eigenvalue problems

Kategorie tematyczne

• 42C99: None of the above, but in this section

• 02.10.De: Algebraic structures and number theory
• 02.30.Nw: Fourier analysis
• 85.35.-p: Nanoelectronic devices

• Wydawca: De Gruyter Open
• Czasopismo: Nanoscale Systems: Mathematical Modeling, Theory and Applications
• Rocznik: 2012
• Tom: 1
• Strony: 48-57

Daty

otrzymano

2012-08-30

poprawiono

2012-10-30

zaakceptowano

2012-10-30

online

2012-11-13

Twórcy

autor

Artur Sowa

• Department of Mathematics and Statistics, University of Saskatchewan, 106 Wiggins Road, Saskatoon, SK S7N 5E6, Canada

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Identyfikatory

DOI

10.2478/nsmmt-2012-0004