Theory, Experiment and Computation of Half Metals for Spintronics: Recent Progress in Si-based Materials

• Autorzy: C. Y. Fong , M. Shaughnessy , L. Damewood , L. H. Yang
• Języki publikacji: EN

Abstrakty

EN

Since the term “spintronics” was conceived in 1996, there have been several directions taken to develop new semiconductor-based magnetic materials for device applications using spin, or spin and charge, as the operational paradigm. Anticipating their integration into mature semiconductor technologies, one direction is to make use of materials involving Si. In this review, we focus on the progress made, since 2005, in Si-based half metallic spintronic materials. In addition to commenting on the experimental growth techniques, we review the computational models and the theory behind the non-spin-polarized and spin-polarized forms of density functional theory and the Kohn-Sham equations. Two software packages, associated with the computational methods, are also discussed. Both experimental and theoretical aspects, leading to recent design of half metallic quantum structures, will be reviewed.

Słowa kluczowe

EN

Digital ferromagnetic heterostructure; half metals; hole doping; spintronics; trilayers

Kategorie tematyczne

• 33F05: Numerical approximation and evaluation

• 75.75.Lf: Electronic structure of magnetic nanoparticles
• 75.30.Hx: Magnetic impurity interactions

• Wydawca: De Gruyter Open
• Czasopismo: Nanoscale Systems: Mathematical Modeling, Theory and Applications
• Rocznik: 2012
• Tom: 1
• Strony: 1-22

Daty

otrzymano

2012-08-02

poprawiono

2012-10-13

zaakceptowano

2012-10-13

online

2012-11-13

Twórcy

autor

C. Y. Fong

• Department of Physics, University of California, Davis, CA 95616 USA

autor

M. Shaughnessy

• Sandia National Laboratories, Livermore, CA 94551 USA

autor

L. Damewood

• Department of Physics, University of California, Davis, CA 95616 USA

autor

L. H. Yang

• Lawrence Livermore National Laboratory, Livermore, CA 94551 USA

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Identyfikatory

DOI

10.2478/nsmmt-2012-0001