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EN
Since the term “spintronics” was conceived in 1996, there have been several directions taken to develop new semiconductor-based magnetic materials for device applications using spin, or spin and charge, as the operational paradigm. Anticipating their integration into mature semiconductor technologies, one direction is to make use of materials involving Si. In this review, we focus on the progress made, since 2005, in Si-based half metallic spintronic materials. In addition to commenting on the experimental growth techniques, we review the computational models and the theory behind the non-spin-polarized and spin-polarized forms of density functional theory and the Kohn-Sham equations. Two software packages, associated with the computational methods, are also discussed. Both experimental and theoretical aspects, leading to recent design of half metallic quantum structures, will be reviewed.
2
Content available remote

Approximating real Pochhammer products: a comparison with powers

100%
Open Mathematics
|
2009
|
tom 7
|
nr 3
493-505
EN
Accurate estimates of real Pochhammer products, lower (falling) and upper (rising), are presented. Double inequalities comparing the Pochhammer products with powers are given. Several examples showing how to use the established approximations are stated.
3
Content available remote

An accurate approximation of zeta-generalized-Euler-constant functions

81%
Open Mathematics
|
2010
|
tom 8
|
nr 3
488-499
EN
Zeta-generalized-Euler-constant functions, $$ \gamma \left( s \right): = \sum\limits_{k = 1}^\infty {\left( {\frac{1} {{k^s }} - \int_k^{k + 1} {\frac{{dx}} {{x^s }}} } \right)} $$ and $$ \tilde \gamma \left( s \right): = \sum\limits_{k = 1}^\infty {\left( { - 1} \right)^{k + 1} \left( {\frac{1} {{k^s }} - \int_k^{k + 1} {\frac{{dx}} {{x^s }}} } \right)} $$ defined on the closed interval [0, ∞), where γ(1) is the Euler-Mascheroni constant and $$ \tilde \gamma $$(1) = ln $$ \frac{4} {\pi } $$, are studied and estimated with high accuracy.
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