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2013 | 11 | 6 | 1140-1152

Tytuł artykułu

Numerical analysis of nonlinear model of excited carrier decay

Treść / Zawartość

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EN

Abstrakty

EN
This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved. The identifiability analysis of the parameters of deep centers is performed and the fitting of the model to experimental data is done by using the genetic optimization algorithm. Results of numerical experiments are presented.

Wydawca

Czasopismo

Rocznik

Tom

11

Numer

6

Strony

1140-1152

Opis fizyczny

Daty

wydano
2013-06-01
online
2013-03-28

Twórcy

  • Department of Mathematical Modeling, Faculty of Fundamental Sciences, Vilnius Gediminas Technical University, Saulėtekio av. 11, 10223, Vilnius, Lithuania
  • Department of Mathematical Modeling, Faculty of Fundamental Sciences, Vilnius Gediminas Technical University, Saulėtekio av. 11, 10223, Vilnius, Lithuania
  • Department of Mathematical Modeling, Faculty of Fundamental Sciences, Vilnius Gediminas Technical University, Saulėtekio av. 11, 10223, Vilnius, Lithuania

Bibliografia

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Typ dokumentu

Bibliografia

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bwmeta1.element.doi-10_2478_s11533-013-0226-8
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